Search for: All records

A neuromuscular junction (NMJ) is a particularized synapse that activates muscle fibers for macro-motions, requiring more energy than computation. Emulating the NMJ is thus challenging owing to the need for both synaptic plasticity and high driving power to trigger motions. Here, we present an artificial NMJ using CuInP₂S₆(CIPS) as a gate dielectric integrated with an AlGaN/GaN-based high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is coupled with the two-dimensional electron gas channel in the HEMT, providing a wide programmable current range of 6 picoampere per millimeter to 5 milliampere per millimeter. The large output current window of the CIPS/GaN ferroelectric HEMT (FeHEMT) allows for amplifier-less actuation, emulating the biological NMJ functions of actuation and synaptic plasticity. We also demonstrate the emulation of biological oculomotor dynamics, including in situ object tracking and enhanced stimulus responses, using the fabricated artificial NMJ. We believe that the CIPS/GaN FeHEMT offers a promising pathway for bioinspired robotics and neuromorphic vision. 

Non-line-of-sight (NLOS) detection and ranging aim to identify hidden objects by sensing indirect light reflections. Although numerous computational methods have been proposed for NLOS detection and imaging, the post-signal processing required by peripheral circuits remains complex. One possible solution for simplifying NLOS detection and ranging involves the use of neuromorphic devices, such as memristors, which have intrinsic resistive-switching capabilities and can store spatiotemporal information. In this study, we employed the memristive spike-timing-dependent plasticity learning rule to program the time-of-flight (ToF) depth information directly into a memristor medium. By coupling the transmitted signal from the source with the photocurrent from the target object into a single memristor unit, we were able to induce a tunable programming pulse based on the time interval between the two signals that were superimposed. Here, this neuromorphic ToF principle is employed to detect and range NLOS objects without requiring complex peripheral circuitry to process raw signals. We experimentally demonstrated the effectiveness of the neuromorphic ToF principle by integrating a HfO2 memristor and an avalanche photodiode to detect NLOS objects in multiple directions. This technology has potential applications in various fields, such as automotive navigation, machine learning, and biomedical engineering. 

Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal–oxide–semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation via simple pulse operation has been hindered by the lack of suitable materials, gate structures, and intrinsic depolarization effects. In this study, we have demonstrated artificial synapses using a GaN-based MOS-HEMT integrated with an α-In2Se3 ferroelectric semiconductor. The van der Waals heterostructure of GaN/α-In2Se3 provides a potential to achieve high-frequency operation driven by a ferroelectrically coupled two-dimensional electron gas (2DEG). Moreover, the semiconducting α-In2Se3 features a steep subthreshold slope with a high ON/OFF ratio (∼1010). The self-aligned α-In2Se3 layer with the gate electrode suppresses the in-plane polarization while promoting the out-of-plane (OOP) polarization of α-In2Se3, resulting in a steep subthreshold slope (10 mV/dec) and creating a large hysteresis (2 V). Furthermore, based on the short-term plasticity (STP) characteristics of the fabricated ferroelectric HEMT, we demonstrated reservoir computing (RC) for image classification. We believe that the ferroelectric GaN/α-In2Se3 HEMT can provide a viable pathway toward ultrafast neuromorphic computing. 

As machine vision technology generates large amounts of data from sensors, it requires efficient computational systems for visual cognitive processing. Recently, in-sensor computing systems have emerged as a potential solution for reducing unnecessary data transfer and realizing fast and energy-efficient visual cognitive processing. However, they still lack the capability to process stored images directly within the sensor. Here, we demonstrate a heterogeneously integrated 1-photodiode and 1 memristor (1P-1R) crossbar for in-sensor visual cognitive processing, emulating a mammalian image encoding process to extract features from the input images. Unlike other neuromorphic vision processes, the trained weight values are applied as an input voltage to the image-saved crossbar array instead of storing the weight value in the memristors, realizing the in-sensor computing paradigm. We believe the heterogeneously integrated in-sensor computing platform provides an advanced architecture for real-time and data-intensive machine-vision applications via bio-stimulus domain reduction.

 

Defect identification has been a significant task in various fields to prevent the potential problems caused by imperfection. There is great attention for developing technology to accurately extract defect information from the image using a computing system without human error. However, image analysis using conventional computing technology based on Von Neumann structure is facing bottlenecks to efficiently process the huge volume of input data at low power and high speed. Herein efficient defect identification is demonstrated via a morphological image process with minimal power consumption using an oxide transistor and a memristor‐based crossbar array that can be applied to neuromorphic computing. Using a hardware and software codesigned neuromorphic system combined with a dynamic Gaussian blur kernel operation, an enhanced defect detection performance is successfully demonstrated with about 104 times more power‐efficient computation compared to the conventional complementary metal‐oxide semiconductor (CMOS)‐based digital implementation. It is believed the back end of line (BEOL)‐compatible all‐oxide‐based memristive crossbar array provides the unique potential toward universal artificial intelligence of things (AIoT) applications where conventional hardware can hardly be used. 

Artificial neural networks (ANNs) are widely used in numerous artificial intelligence‐based applications. However, the significant amount of data transferred between computing units and storage has limited the widespread deployment of ANN for the artificial intelligence of things (AIoT) and power‐constrained device applications. Therefore, among various ANN algorithms, quantized neural networks (QNNs) have garnered considerable attention because they require fewer computational resources with minimal energy consumption. Herein, an oxide‐based ternary charge‐trap transistor (CTT) that provides three discrete states and non‐volatile memory characteristics are introduced, which are desirable for QNN computing. By employing a differential pair of ternary CTTs, an artificial synaptic segregation with multilevel quantized values for QNNs is demostrated. The approach establishes a platform that combines the advantages of multiple states and robustness to noise for in‐memory computing to achieve reliable QNN performance in hardware, thereby facilitating the development of energy‐efficient AIoT.

 

Existing transfer technologies in the construction of film-based electronics and devices are deeply established in the framework of native solid substrates. Here, we report a capillary approach that enables a fast, robust, and reliable transfer of soft films from liquid in a defect-free manner. This capillary transfer is underpinned by the transfer front of dynamic contact among receiver substrate, liquid, and film, and can be well controlled by a selectable motion direction of receiver substrates at a high speed. We demonstrate in extensive experiments, together with theoretical models and computational analysis, the robust capabilities of the capillary transfer using a versatile set of soft films with a broad material diversity of both film and liquid, surface-wetting properties, and complex geometric patterns of soft films onto various solid substrates in a deterministic manner.

 

Precise diagnosis and immunity to viruses, such as severe acute respiratory syndrome coronavirus 2 (SARS‐CoV‐2) and Middle East respiratory syndrome coronavirus (MERS‐CoV) is achieved by the detection of the viral antigens and/or corresponding antibodies, respectively. However, a widely used antigen detection methods, such as polymerase chain reaction (PCR), are complex, expensive, and time‐consuming Furthermore, the antibody test that detects an asymptomatic infection and immunity is usually performed separately and exhibits relatively low accuracy. To achieve a simplified, rapid, and accurate diagnosis, we have demonstrated an indium gallium zinc oxide (IGZO)‐based biosensor field‐effect transistor (bio‐FET) that can simultaneously detect spike proteins and antibodies with a limit of detection (LOD) of 1 pg mL^–1and 200 ng mL^–1, respectively using a single assay in less than 20 min by integrating microfluidic channels and artificial neural networks (ANNs). The near‐sensor ANN‐aided classification provides high diagnosis accuracy (>93%) with significantly reduced processing time (0.62%) and energy consumption (5.64%) compared to the software‐based ANN. We believe that the development of rapid and accurate diagnosis system for the viral antigens and antibodies detection will play a crucial role in preventing global viral outbreaks.

image